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80 GHz field-effect transistors produced using high purity semiconducting single-walled carbon nanotubes

✍ Scribed by Nougaret, L.; Happy, H.; Dambrine, G.; Derycke, V.; Bourgoin, J. -P.; Green, A. A.; Hersam, M. C.

Book ID: 120560181
Publisher: American Institute of Physics
Year: 2009
Tongue: English
Weight: 630 KB
Volume: 94
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.3155212

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