✦ LIBER ✦
7587. Atomic diffusion and surface segregation of Si in δ-doped GaAs grown by gas source molecular beam epitaxy: J E Cunningham et al,J Vac Sci Technol,B8, 1990, 157–159
- Publisher
- Elsevier Science
- Year
- 1991
- Tongue
- English
- Weight
- 150 KB
- Volume
- 42
- Category
- Article
- ISSN
- 0042-207X
No coin nor oath required. For personal study only.