✦ LIBER ✦
7293. Molecular beam epitaxial growth of high-quality GaAs on Si using a high-temperature in situ annealing process: Y C Kao et al,J Vac Sci Technol, B8, 1990, 250–253
- Publisher
- Elsevier Science
- Year
- 1991
- Tongue
- English
- Weight
- 152 KB
- Volume
- 42
- Category
- Article
- ISSN
- 0042-207X
No coin nor oath required. For personal study only.