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7221. Removal of the process-induced fluorine associated to chemical vapor deposition of tungsten onto a polycrystallization silicon gate structure by heat treatment in a hydrogen-containing atmosphere: Th Eriksson et al,J Appl Phys, 68, 1990, 2112–2120


Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
144 KB
Volume
42
Category
Article
ISSN
0042-207X

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