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6H silicon carbide MOSFET modelling for high temperature analogue integrated circuits (25-500°C)

✍ Scribed by Rebello, N.S.; Shoucair, F.S.; Palmour, J.W.


Book ID
114447511
Publisher
The Institution of Electrical Engineers
Year
1996
Tongue
English
Weight
936 KB
Volume
143
Category
Article
ISSN
1350-2409

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