✦ LIBER ✦

60Co γ-ray irradiation effects on the capacitance and conductance characteristics of tin oxide films on Si

✍ Scribed by A. Birkan Selçuk; S. Bilge Ocak

Publisher: Elsevier Science
Year: 2007
Tongue: English
Weight: 284 KB
Volume: 577
Category: Article
ISSN: 0168-9002
DOI: 10.1016/j.nima.2007.04.107

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

60Co γ-ray irradiation effects on dielec

60Co γ-ray irradiation effects on dielectric characteristics of tin oxide films of different thicknesses on n-type Si(1 1 1) substrates

✍ S. Karadeniz 📂 Article 📅 2007 🏛 Elsevier Science 🌐 English ⚖ 345 KB

60Co γ-ray irradiation effects on the in

60Co γ-ray irradiation effects on the interface traps density of tin oxide films of different thicknesses on n-type Si (1 1 1) substrates

✍ N. Tuğluoğlu 📂 Article 📅 2007 🏛 Elsevier Science 🌐 English ⚖ 306 KB

Effects of 60Co γ-ray irradiation on the

Effects of 60Co γ-ray irradiation on the electrical characteristics of Au/n-GaAs (MS) structures

✍ Ş. Karataş; A. Türüt; Ş. Altındal 📂 Article 📅 2005 🏛 Elsevier Science 🌐 English ⚖ 380 KB

On the interface trap density and series

On the interface trap density and series resistance of tin oxide film prepared on n-type Si (1 1 1) substrate: Frequency dependent effects before and after 60Co γ-ray irradiation

✍ S. Karadeniz; A. Birkan Selçuk; N. Tuğluoğlu; S. Bilge Ocak 📂 Article 📅 2007 🏛 Elsevier Science 🌐 English ⚖ 256 KB

60Co γ irradiation effects on the curren

60Co γ irradiation effects on the current–voltage (I–V) characteristics of Al/SiO2/p-Si (MIS) Schottky diodes

✍ A. Tataroğlu; Ş. Altındal; M.M. Bülbül 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 290 KB

Effect of oxide thickness on the capacit

Effect of oxide thickness on the capacitance and conductance characteristics of MOS structures

✍ N. Tuğluoğlu; S. Karadeniz; A. Birkan Selçuk; S. Bilge Ocak 📂 Article 📅 2007 🏛 Elsevier Science 🌐 English ⚖ 245 KB

In this work, the investigation of the interface states density and series resistance from capacitance-voltage (C-V) and conductance-voltage (G-V) characteristics in Au/SnO 2 /n-Si (MOS) structures prepared at various SnO 2 layer thicknesses by spray deposition technique have been reported. It is fa