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6 nm half-pitch lines and 0.04 µm 2 static random access memory patterns by nanoimprint lithography

✍ Scribed by Austin, Michael D; Zhang, Wei; Ge, Haixiong; Wasserman, D; Lyon, S A; Chou, Stephen Y


Book ID
121311248
Publisher
Institute of Physics
Year
2005
Tongue
English
Weight
671 KB
Volume
16
Category
Article
ISSN
0957-4484

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