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55% PAE and High Power Ka-Band GaN HEMTs With Linearized Transconductance via GaN Source Contact Ledge

✍ Scribed by Moon, J.S.; Wong, D.; Hu, M.; Hashimoto, P.; Antcliffe, M.; McGuire, C.; Micovic, M.; Willadson, P.


Book ID
115545395
Publisher
IEEE
Year
2008
Tongue
English
Weight
281 KB
Volume
29
Category
Article
ISSN
0741-3106

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