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4M-bit DRAMS: 80 ns high-speed accessing accomplished using 0.8 μm P/N CMOS microfabrication technology : Masayoshi Nakane and Testsuo Ono. JEE (Japan) 32 (January 1989)


Book ID
103282849
Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
120 KB
Volume
30
Category
Article
ISSN
0026-2714

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