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4H-SiC power bipolar junction transistor with a very low specific ON-resistance of 2.9 m/spl Omega//spl middot/cm/sup 2/

✍ Scribed by Jianhui Zhang; P. Alexandrov; T. Burke; J. Zhao


Book ID
126607394
Publisher
IEEE
Year
2006
Tongue
English
Weight
254 KB
Volume
27
Category
Article
ISSN
0741-3106

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