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485. Ion implantation for the doping of semiconductors

Book ID
104263666
Publisher
Elsevier Science
Year
1970
Tongue
English
Weight
145 KB
Volume
20
Category
Article
ISSN
0042-207X

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Novel ion beam processing for microelectronic applications has been performed by doping silicon with a focused ion beam tool. A Ga + ion beam with a energy between 10 and 50 keV was used for p-doping of Si. The ion beam could be focused to an effective beam diameter in the sub-micron range with the