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4.5 mW operation of AlGaN-based 267 nm deep-ultraviolet light-emitting diodes

✍ Scribed by Yasan, A.; McClintock, R.; Mayes, K.; Shiell, D.; Gautero, L.; Darvish, S. R.; Kung, P.; Razeghi, M.

Book ID: 121401966
Publisher: American Institute of Physics
Year: 2003
Tongue: English
Weight: 304 KB
Volume: 83
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.1633019

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