✦ LIBER ✦
4377605 Method for forming an insulating layer on a polycrystalline silicon layer of a semiconductor device usng a two-step thermal oxidation technique
✍ Scribed by Takashi Yamamoto
- Book ID
- 107829547
- Publisher
- Elsevier Science
- Year
- 1983
- Tongue
- English
- Weight
- 61 KB
- Volume
- 23
- Category
- Article
- ISSN
- 0026-2714
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