✦ LIBER ✦
435mS/mm transconductance for AlGaN/GaN HEMTs on HR-Si substrate with optimised gate-source spacing
✍ Scribed by Bouzid, S.; Maher, H.; Defrance, N.; Hoel, V.; Lecourt, F.; Renvoise, M.; De Jaeger, J.C.; Frijlink, P.
- Book ID
- 127146408
- Publisher
- The Institution of Electrical Engineers
- Year
- 2012
- Tongue
- English
- Weight
- 158 KB
- Volume
- 48
- Category
- Article
- ISSN
- 0013-5194
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