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4201. Symmetry determination of surface states on GaAs (110) using polarization-dependent, angle-resolved photoemission. (USA)

Publisher: Elsevier Science
Year: 1979
Tongue: English
Weight: 140 KB
Volume: 29
Category: Article
ISSN: 0042-207X
DOI: 10.1016/s0042-207x(79)80962-8

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conduction band potential obtained from the threshold measurements shows only a small deviation from a fiat band, less than • i 0.05 eV, tip to a point 4 A, from the silicon surface. There is no indication of a large ionic charge or of a greatly reduced SiO, bandgap to within about two lattice units

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