4.1 mW 50 dBΩ 10 Gbps transimpedance amplifier for optical receivers in 0.13 μm CMOS
✍ Scribed by Trong-Hieu Ngo; Tae-Woo Lee; Hyo-Hoon Park
- Publisher
- John Wiley and Sons
- Year
- 2010
- Tongue
- English
- Weight
- 592 KB
- Volume
- 53
- Category
- Article
- ISSN
- 0895-2477
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✦ Synopsis
Abstract
A transimpedance amplifier (TIA), using the combination of the shunt‐feedback topology with the regulated‐cascode input stage and broadband matching network, is designed and implemented in a 0.13‐μm CMOS technology. The proposed TIA achieves a 3‐dB bandwidth of 7.5 GHz, transimpedance gain of 50 dBΩ in the presence of 300 fF photodiode capacitance. It dissipates 4.1 mW from a 1.2 V supply voltage, and occupies a chip area without pads of 0.42 × 0.17 mm^2^. The TIA presents the highest gain‐bandwidth product per DC power figure of merit of 578 GHz Ω/mW compared with recently published TIAs. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 53:448–451, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.25741