𝔖 Bobbio Scriptorium
✦   LIBER   ✦

3D characterization of a W/TiN/ Ti/Si contact structure using MULSAM

✍ Scribed by Roberts, R. H.; Prutton, M.; Wilkinson, D. K.; Barkshire, I. R.; Hill, C. J.; Pearson, P. J.; Augustus, P. D.; Skinner, D. K.; Stribley, K.

Publisher
John Wiley and Sons
Year
1998
Tongue
English
Weight
948 KB
Volume
26
Category
Article
ISSN
0142-2421

No coin nor oath required. For personal study only.

✦ Synopsis

The W/TiN/Ti/Si contact structures needed for ultra-large-scale integrated circuits have been studied using crosssectional transmission electron microscopy (TEM) and multi-spectral Auger electron microscopy. Access to the Ti/Si interface for chemical characterization using SEM, Auger and electron energy-loss imaging and spectroscopy has been achieved by using a novel method of bevelled polishing of the silicon substrate material. Cross-sectional TEM was used to calibrate the depth scale in the MULSAM image sets, so allowing measurements of the thicknesses of various interfacial layers and the penetration of the ohmic contacts into the silicon. The TiN layer, providing adhesion of the tungsten as well as acting as a di †usion barrier, appears to have a domed shape, which penetrates the tungsten overlayer to a greater extent in the contact centres. The results of this work, combined with earlier, related, studies, enable a three-dimensional characterization of the bottom and sidewall structures in these contacts.

📜 SIMILAR VOLUMES

Landolt-Börnstein, Zahlenwerte und Funkt
Landolt-Börnstein, Zahlenwerte und Funktiunen aus Naturwissenschaft und Technik. New Series. Ed. in Chief: K.-H. Hellwege, O. Madelung, Group III: Crystal and Solid State Physics. Vol. 7: Crystal Structure. Data of Inorganic Compounds. W. Pies, A. Weiss. Part d: Key Elements: Si, Ge, Sn, Pb; B, Al, Ga, In, Tl; Be. d 1: Key Elements Si, Ge, Sn, Pb. d 1β: Key Element Si. In cooperation with G. Pieper. Eds. K.-H. Hellwege, A. M. Hellwece. Springer-Verlag Berlin-Heidelberg-New York-Tokyo. 1985. XXV + 506 pages. Hard cover DM 1160, – ISBN 3-540-13930-3
✍ P. Paufler 📂 Article 📅 1986 🏛 John Wiley and Sons 🌐 English ⚖ 58 KB 👁 1 views
Landolt-Börnstein. Numerical Data and Fu
Landolt-Börnstein. Numerical Data and Functional Relationships in Science and Technology. New Series. Editors in Chief: K.-H. Hellwege, O. Madelung. Group III: Crystal and Solid State Physics. Vol. 7 : Crystal Structure Data of Organic Compounds. By W. Pies and A. Weiss. Part d: Key Elements: Si, Ge, Sn, Pb; B, Al, Ga, In, Tl; Be. dl: Key Elements Si, Ge, Sn, Pb. dlα Key Element Si. In cooperation with G. Will. Editors: K.-H. Hellwege, A. M. Hellwege. Springer-Verlag, Berlin-Heidelberg-New York-Tokyo 1985, 15 figs XXIII + 464 pages, Cloth DM 950.—, ISBN 3-540-13562-6
✍ P. Paufler 📂 Article 📅 1986 🏛 John Wiley and Sons 🌐 English ⚖ 53 KB 👁 1 views