3939. Electron trapping in SiO2 due to electron-beam deposition of aluminum. (USA)
- Publisher
- Elsevier Science
- Year
- 1979
- Tongue
- English
- Weight
- 138 KB
- Volume
- 29
- Category
- Article
- ISSN
- 0042-207X
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โฆ Synopsis
and 0.43, respectively. The theory presented should hold over a much wider range of E/p than that for which experimental results are available.
๐ SIMILAR VOLUMES
## ลฝ . ลฝ . Scanning tunneling microscopy STM and scanning tunneling spectroscopy STS have been employed for the investigation of trap creation in ultrathin SiO films on an atomic scale. Bright spots created by electron injection using 2 STM tips were observed in STM images. The density of bright s
It is well known that SiO 2 is decomposed to silicon and oxygen under irradiation by an electron beam. We have discovered that Si nanocrystals can be formed in SiO 2 thin films with a high-intensity convergent electron beam at high temperature. In the present work, we examined the formation process