๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

3939. Electron trapping in SiO2 due to electron-beam deposition of aluminum. (USA)


Publisher
Elsevier Science
Year
1979
Tongue
English
Weight
138 KB
Volume
29
Category
Article
ISSN
0042-207X

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โœฆ Synopsis


and 0.43, respectively. The theory presented should hold over a much wider range of E/p than that for which experimental results are available.


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It is well known that SiO 2 is decomposed to silicon and oxygen under irradiation by an electron beam. We have discovered that Si nanocrystals can be formed in SiO 2 thin films with a high-intensity convergent electron beam at high temperature. In the present work, we examined the formation process