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3653. Electron-beam-induced current and TEM studies of stacking faults formed by the oxidation of boron-implanted silicon: T E Seidel et al, J appl Phys, 48 (12), 1977, 5038–5042


Book ID
103458760
Publisher
Elsevier Science
Year
1978
Tongue
English
Weight
138 KB
Volume
28
Category
Article
ISSN
0042-207X

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