✦ LIBER ✦
3-D TCAD simulation study of the single event effect on 25 nm raised source-drain FinFET
✍ Scribed by JunRui Qin, ShuMing Chen, JianJun Chen
- Book ID
- 113083043
- Publisher
- SP Science China Press
- Year
- 2012
- Tongue
- English
- Weight
- 511 KB
- Volume
- 55
- Category
- Article
- ISSN
- 1006-9321
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