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2.4 GHz single-balanced diode mixer fabricated on Al2O3 substrate by thin-film technology

✍ Scribed by Yen-Heng Linand; Yi-Jen Chan

Publisher: John Wiley and Sons
Year: 2000
Tongue: English
Weight: 182 KB
Volume: 25
Category: Article
ISSN: 0895-2477
DOI: 10.1002/(sici)1098-2760(20000420)25:2<83::aid-mop1>3.0.co;2-g

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✦ Synopsis

A passi¨e balun using spiral inductors and interdigital capacitors has been de¨eloped for a 2.4 GHz balanced diode mixer on ( Al O substrates. Using this passi¨e balun on the input port RF port 2 3 ) and LO port of a mixer circuit and incorporating the Schottky diode model, a wideband single-balanced diode mixer was designed, fabricated, and characterized ᮊ 2000

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