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226. Choice of regimes of preparation of n-p-n silicon planar transistors with application of the ion implantation method: I D Goloto et al, Izv VUZ Radioelektron, 16 (4), 1973, 92–94 (in Russian)


Book ID
103459937
Publisher
Elsevier Science
Year
1974
Tongue
English
Weight
146 KB
Volume
24
Category
Article
ISSN
0042-207X

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