✦ LIBER ✦
200 nm gate-length GaAs-based MHEMT devices by electron beam lithography
✍ Scribed by Xu, JingBo ;Zhang, HaiYing ;Wang, WenXin ;Liu, Liang ;Li, Ming ;Fu, XiaoJun ;Niu, JieBin ;Ye, TianChun
- Book ID
- 107368626
- Publisher
- Elsevier
- Year
- 2008
- Tongue
- English
- Weight
- 685 KB
- Volume
- 53
- Category
- Article
- ISSN
- 2095-9273
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