1/f Noise in an AlxGa1−xAs/GaAs heterostructure between 77 and 300 K

✍ Scribed by L. Ren; M.R. Leys

• Publisher: Elsevier Science
• Year: 1993
• Tongue: English
• Weight: 634 KB
• Volume: 192
• Category: Article
• ISSN: 0921-4526
• DOI: 10.1016/0921-4526(93)90002-n

✦ Synopsis

Low-frequency (LF) noise was measured on an AIXGa,_,As/GaAs heterostructure in the temperature range from 77 to 300 K. Two types of excess noise, l/f and an extremely broadened (EB) Lorentzian noise, were observed. Like van Die et al., we attributed the observed EB Lorentzian noise to the resl-space transfer of the electrons from the two-dimensional electron gas (2DEG) to the n-AI,Ga,_,As layer and vice versa. A good agreement of (Y values of the l/f noise at high temperatures and their temperature dependences in the heterostructures with those of bulk n-GaAs indicate that the l/f noise in the heterostructures has the same origin as in bulk n-GaAs.