✦ LIBER ✦
1/f Noise and trap density in n-channel strained-Si/SiGe modulation doped field effect transistors
✍ Scribed by Kristel Fobelets; Sergey L. Rumyantsev; Thomas Hackbarth; Michael S. Shur
- Book ID
- 108271730
- Publisher
- Elsevier Science
- Year
- 2009
- Tongue
- English
- Weight
- 271 KB
- Volume
- 53
- Category
- Article
- ISSN
- 0038-1101
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