1/f electrical noise due to space charge regions

✍ Scribed by J.I. Izpura

• Book ID: 104022611
• Publisher: Elsevier Science
• Year: 2007
• Tongue: English
• Weight: 386 KB
• Volume: 27
• Category: Article
• ISSN: 0955-2219
• DOI: 10.1016/j.jeurceramsoc.2007.02.098

✦ Synopsis

This paper shows how a backgating noise coming from boundary space charge regions becomes a 1/f resistance noise due to the biasing of the samples. This overseen noise that is Lorentzian with no bias applied, becomes a continuous set of Lorentzian terms in biased samples that synthesizes a 1/f resistance noise. The ratio f high /f low for the frequency band where 1/f noise appears is an exponential function of the bias voltage measured in thermal voltage units V T = kT/q at the temperature T of the experiment. Grain boundaries and planar interfaces are powerful sources of this 1/f electrical noise.