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1D Simulation of Oxidation-Enhanced and Oxidation-Retarded Diffusion in Silicon and Validity of the Physical Model. Transition to the 2D Case

✍ Scribed by Scheid, E. ;Chenevier, P.


Publisher
John Wiley and Sons
Year
1986
Tongue
English
Weight
621 KB
Volume
93
Category
Article
ISSN
0031-8965

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