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1D-0D-1D Transitions in GaAs/AlGaAs Electron Waveguides Coupled by a Semiconducting Island

✍ Scribed by L. Worschech; S. Reitzenstein; A. Forchel

Publisher: John Wiley and Sons
Year: 2001
Tongue: English
Weight: 88 KB
Volume: 224
Category: Article
ISSN: 0370-1972
DOI: 10.1002/(sici)1521-3951(200104)224:3<863::aid-pssb863>3.0.co;2-5

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✦ Synopsis

We have fabricated single semiconducting islands imbedded between two quantum wires by using high resolution electron beam lithography and wet etching on doped GaAs/AlGaAs heterostructures. The quantum dots were realized by displacing a 180 nm square section at the center of a 1 mm long and 180 nm wide straight wire. The narrow sections between the semiconducting island and the wires serve as barriers. In the linear transport regime, oscillations due to resonant tunneling and Coulomb blockade are observed at 4.2 K. A finite source-drain bias voltage leads to negative differential conductance.

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