✦ LIBER ✦
1534. Some properties of Si3N4 films prepared by reactive sputtering in high-frequency discharge: M F Bykov et al, Elektron Tekh Tekhnol Organiz Proizv, 6, 1970, 82–86 (in Russian)
- Publisher
- Elsevier Science
- Year
- 1971
- Tongue
- English
- Weight
- 138 KB
- Volume
- 21
- Category
- Article
- ISSN
- 0042-207X
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