✦ LIBER ✦
145. Oxidation of silicon carbide in the temperature range 1200 to 1500°.: Note by Robert F. Adamskym, J. Phys. Chem., 63, 305–307, Feb. 59
- Publisher
- Elsevier Science
- Year
- 1960
- Tongue
- English
- Weight
- 74 KB
- Volume
- 10
- Category
- Article
- ISSN
- 0042-207X
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