We have made substantial progress in the development of GaN photocathodes, including crystalline and polycrystalline GaN and InGaN coatings grown by chemical vapor deposition or molecular beam epitaxy on sapphire substrates. GaN and InGaN photocathodes have been developed with efficiencies up to 70%
β¦ LIBER β¦
13. The development of photocathodes for photomultipliers
β Scribed by RJ Stapleton; AG Wright
- Publisher
- Elsevier Science
- Year
- 1980
- Tongue
- English
- Weight
- 37 KB
- Volume
- 30
- Category
- Article
- ISSN
- 0042-207X
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
Development of GaN photocathodes for UV
β
O. Siegmund; J. Vallerga; J. McPhate; J. Malloy; A. Tremsin; A. Martin; M. Ulmer
π
Article
π
2006
π
Elsevier Science
π
English
β 325 KB
The localization of the position of ligh
β
G. Charpak
π
Article
π
1967
π
Elsevier Science
β 144 KB
Development of large-area, air-stable ph
β
D.C. Imrie; A.H. Moghul; K. Wells; G. Charpak; V. Peskov
π
Article
π
1991
π
Elsevier Science
π
English
β 500 KB
A correction of the quantum efficiency o
β
A. Breskin; R. Chechik; D. Vartsky; G. Malamud; P. MinΓ©
π
Article
π
1994
π
Elsevier Science
π
English
β 273 KB
Review of the development of cesium iodi
β
J. Almeida; A. Amadon; P. Besson; P. Bourgeois; A. Braem; A. Breskin; A. Buzulut
π
Article
π
1995
π
Elsevier Science
π
English
β 499 KB
Development of HPDs with an 18-mm-diamet
β
M. Hayashida; R. Mirzoyan; M. Teshima
π
Article
π
2006
π
Elsevier Science
π
English
β 172 KB
A new type of Hybrid PhotoDetectors (HPDs) with an 18-mm-diameter GaAsP photocathode was developed in order to lower the energy threshold of the MAGIC-II project. The peak value of the Quantum Efficiency (QE) reaches 51% at around 500 nm. Application of the wavelength shifting technique can further