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1220–1280-nm Optically Pumped InAs Quantum Dot-Based Vertical External-Cavity Surface-Emitting Laser

✍ Scribed by Albrecht, A.R.; Stintz, A.; Jaeckel, F.T.; Rotter, T.J.; Ahirwar, P.; Patel, V.J.; Hains, C.P.; Lester, L.F.; Malloy, K.J.; Balakrishnan, G.


Book ID
114571206
Publisher
IEEE
Year
2011
Tongue
English
Weight
933 KB
Volume
17
Category
Article
ISSN
1077-260X

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We apply 8-band k.p model to study InAs/GaAs quantum dots (QDs). The strain was calculated using the valence force field (VFF) model which includes the four nearest-neighbour interactions. For the optical properties, we take into account both homogeneous and non-homogeneous broadening for the optica