11.8 GHz GAINP/GAAS HBT dynamic frequency divider using HLO-FF technique
✍ Scribed by Hung-Ju Wei; Chinchun Meng; YuWen Chang; Guo-Wei Huang
- Book ID
- 102949209
- Publisher
- John Wiley and Sons
- Year
- 2008
- Tongue
- English
- Weight
- 586 KB
- Volume
- 50
- Category
- Article
- ISSN
- 0895-2477
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✦ Synopsis
Abstract
An integrated GaInP/GaAs heterojunction bipolar transistor (HBT) dynamic frequency divider based on HLO‐FF (high‐speed latching operating flip‐flop) structure is demonstrated at 4.1–11.8 GHz. In this experiment, a conventional static frequency divider using the same cut‐off‐frequency device is also fabricated for comparison. By biasing the HBT transistors around the peak of f~T~ and optimizing the I~read~/I~latch~ ratio, the maximum operating frequency of the HLO‐FF is greatly improved due to higher slew‐rate and smaller voltage swing. The speed of HLO‐FF is faster about 48% than that of static structure. The core current is 13 mA at the supply voltage of 5 V. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 2642–2645, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23740