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1178. Current and breakdown characteristics of amorphous SIO2 in metal-oxide-semiconductor structure: A Plenier and B K Chakraverty, International Conf Phys Chem Semiconductors Heterojunctions Layer Structure, Vol 4, Akademiai Kiado Budapest 1971, 161–170


Publisher
Elsevier Science
Year
1972
Tongue
English
Weight
149 KB
Volume
22
Category
Article
ISSN
0042-207X

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