1175. Production and properties of MIS structures on the basis of germanium nitride: G D Bagratishvili et al, International Conf Phys Chem Semiconductors Heterojunctions Layer Structure, Vol 4, Akademiai Kiado Budapest 1971, 65–70

• Publisher: Elsevier Science
• Year: 1972
• Tongue: English
• Weight: 149 KB
• Volume: 22
• Category: Article
• ISSN: 0042-207X
• DOI: 10.1016/0042-207x(72)91370-x