100 cm2 solar cells on Czochralski silicon with an efficiency of 20·2%
✍ Scribed by S. W. Glunz; B. Köster; T. Leimenstoll; S. Rein; E. Schäffer; J. Knobloch; T. Abe
- Publisher
- John Wiley and Sons
- Year
- 2000
- Tongue
- English
- Weight
- 88 KB
- Volume
- 8
- Category
- Article
- ISSN
- 1062-7995
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✦ Synopsis
A solar cell process optimized for oxygen-contaminated silicon was used to fabricate 10 Â 10 cm 2 cells on gallium-doped p-type Czochralski (Cz) silicon. An independently con®rmed record eciency of 20 . 2% was achieved. Although the material used contains a signi®cant concentration of interstitial oxygen, no illumination-induced degradation of the cell parameters was observed. This is in excellent agreement with the observation that the metastable defect underlying the minority carrier lifetime is correlated with oxygen and boron. Thus, using gallium instead of boron as the dopant for p-type Cz silicon is an appropriate way to avoid the carrier lifetime degradation which is observed in boron-doped oxygen-contaminated Cz-Si. Copyright # 2000 John Wiley & Sons, Ltd.