1.0 μm gate-length InP-based InGaAs high electron mobility transistors by mental organic chemical vapor deposition

✍ Scribed by Cheng Gao 高成, Hai-ou Li 李海鸥, Jiao-ying Huang 黄姣英, Sheng-long Diao 刁胜龙

• Book ID: 118818334
• Publisher: Central South University
• Year: 2012
• Tongue: English
• Weight: 629 KB
• Volume: 19
• Category: Article
• ISSN: 2095-2899
• DOI: 10.1007/s11771-012-1427-1