10 GHZ Si Schottky-barrier impatt diode with hyperabrupt impurity distribution produced by ion implantation : T. Misawa, R. A. Moline and A. R. Tretola. Solid State Electron.15 (1972), p. 189

• Publisher: Elsevier Science
• Year: 1972
• Tongue: English
• Weight: 121 KB
• Volume: 11
• Category: Article
• ISSN: 0026-2714
• DOI: 10.1016/0026-2714(72)90227-2