1 mW AlInGaN-based ultraviolet light-emitting diode with an emission wavelength of 348 nm grown on sapphire substrate

✍ Scribed by Wang, T.; Liu, Y. H.; Lee, Y. B.; Ao, J. P.; Bai, J.; Sakai, S.

• Book ID: 121401965
• Publisher: American Institute of Physics
• Year: 2002
• Tongue: English
• Weight: 253 KB
• Volume: 81
• Category: Article
• ISSN: 0003-6951
• DOI: 10.1063/1.1510967