0.2-μm gate AlGaAs/GaAs HIGFET (heterostructure insulated gate FET) with a (111) face of n+-GaAs selectively grown by MOCVD

✍ Scribed by Umemoto, Y.; Matsumoto, H.; Hiruma, K.; Ohishi, Y.; Oda, H.; Takahama, M.; Miyazaki, M.; Imamura, Y.

• Book ID: 114534779
• Publisher: IEEE
• Year: 1991
• Tongue: English
• Weight: 139 KB
• Volume: 38
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/16.158727