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0.2-μm fully-self-aligned Y-shaped gate HJFET's with reduced gate-fringing capacitance fabricated using collimated sputtering and electroless Au-plating

✍ Scribed by Wada, S.; Tokushima, M.; Fukaishi, M.; Matsuno, N.; Yano, H.; Hida, H.; Maeda, T.


Book ID
114537378
Publisher
IEEE
Year
1998
Tongue
English
Weight
259 KB
Volume
45
Category
Article
ISSN
0018-9383

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