00/03498 Electrical and photovoltaic properties of photosensitised ITO/a-Si:H p-i-n/TPyP/Au cells
- Publisher
- Elsevier Science
- Year
- 2000
- Weight
- 215 KB
- Volume
- 41
- Category
- Article
- ISSN
- 0140-6701
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✦ Synopsis
07 Alternative energy sources (solar energy) 00/03497 Effect of selenization pressure on CuinSe, thin films selenized using co-sputtered Cu-In precursors Kim, S. D. Solar Energy Mcrreriuls & Solar Cells, 2000, 62, (4), 357-368. CuInSez thin films were formed from the selenization of co-sputtered copper-indium alloy layers. These layers consisted of only two phases, CuInz and Cut, In4, over broad copper-indium composition ratio. The concentration of Cui, Ins phase increased by varying the composition from indium-rich to copper-rich.
The composition of co-sputtered copperindium alloy layers was linearly dependent on the sputtering power of copper and indium targets. The metallic layers were selenized either at a low pressure of 10 mTorr or at 1 atm Ar. A small number of copperselenium and indium-selenium compounds were observed during the early stage of selenization and single-phase CuInSea was more easily formed in vacuum than at 1 atm Ar. Therefore, CuInSea films selenized in vacuum showed smoother surface and denser microstructure than those selenized at 1 atm. The results showed that CuInSel films selenized in vacuum had good properties suitable for a solar cell.