07 Alternative energy sources (solar energy) 00/03497 Effect of selenization pressure on CuinSe, thin films selenized using co-sputtered Cu-In precursors Kim, S. D. Solar Energy Mcrreriuls & Solar Cells, 2000, 62, (4), 357-368. CuInSez thin films were formed from the selenization of co-sputtered copper-indium alloy layers. These layers consisted of only two phases, CuInz and Cut, In4, over broad copper-indium composition ratio. The concentration of Cui, Ins phase increased by varying the composition from indium-rich to copper-rich.
The composition of co-sputtered copperindium alloy layers was linearly dependent on the sputtering power of copper and indium targets. The metallic layers were selenized either at a low pressure of 10 mTorr or at 1 atm Ar. A small number of copperselenium and indium-selenium compounds were observed during the early stage of selenization and single-phase CuInSea was more easily formed in vacuum than at 1 atm Ar. Therefore, CuInSea films selenized in vacuum showed smoother surface and denser microstructure than those selenized at 1 atm. The results showed that CuInSel films selenized in vacuum had good properties suitable for a solar cell.